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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB511 DESCRIPTION With TO-220C package Complement to type 2SD325 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak SEM GE Open base Open emitter OND IC CONDITIONS TOR UC VALUE -35 -35 -5 -1.5 -3.0 UNIT V V V A A Open collector Ta=25ae PC Collector dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 1.75 W 10 150 -50~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB511 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -35 V VCEsat Collector-emitter saturation voltage IC=-1.5A; IB=-0.15A -1.0 V VBE Base-emitter on voltage IC=-1A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-20V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 40 320 hFE-2 DC current gain fT Transition frequency D E F 100-200 160-320 IC=-0.1A ; VCE=-2V 35 IC=-0.5A ; VCE=-5V hFE-1 Classifications C 40-80 HAN INC 60-120 SEM GE OND IC TOR UC 8 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB511 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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